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• W2005962009 abstract "Topological insulator Bi2Te3 nanoplates with hexagonal, triangular and truncated triangular nanostructures have been fabricated with thickness of ∼10 nm by vacuum vapor phase deposition method. The possible formation mechanism of Bi2Te3 nanoplates with different nanostructures has been proposed. We have examined the surface potentials of Bi2Te3 nanoplates using Kelvin probe force microscopy. The surface potential of Bi2Te3 nanoplates is determined to be about 482 mV on the SiO2/Si substrate, 88 mV and -112 mV on the n-doped and p-doped Si (111) substrates, respectively. The surface potential information provides insight into understanding electronic properties of Bi2Te3 nanoplates, which may open a new door to the exploration of the topological insulators." @default.
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• W2005962009 date "2012-01-12" @default.
• W2005962009 modified "2023-10-15" @default.
• W2005962009 title "Growth and surface potential characterization of Bi₂Te₃ nanoplates" @default.
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• W2005962009 doi "https://doi.org/10.1063/1.3679160" @default.
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