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- W2005963744 abstract "The electron affinity of the negative electron affinity (NEA) surface of p-GaAs, created by coadsorption of Cs and O2, increases (becomes less negative), when it is exposed to CO2 or excess O2, while CO has no effect. To find the cause for this difference, we have investigated the bonding structure of these molecules (or atoms) at the Cs/p-GaAs surface by thermal desorption spectroscopy (TDS). The TDS data show a common feature that is shared by the (Cs + O2) and (Cs + CO2) coadsorbed surfaces but not by the (Cs + CO) coadsorbed surface. From the cesiated surface after large exposure to O2 or CO2 (> 2 L), As2 and Cs desorb simultaneously at ∼ 450°C. The desorption peaks do not appear at this temperature for a clean GaAs surface or a pure Cs adsorbed surface. Simultaneous desorption of Cs and As2 indicates the existence of AsOCs bonds. In contrast, Cs and As2 desorb at different temperatures from the surface exposed to CO. From these observations and the fact that CO does not affect NEA, we conclude that AsOCs bonds in the surface layer increase the surface electron affinity, i.e., works against creating an NEA surface." @default.
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- W2005963744 date "1993-03-01" @default.
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- W2005963744 title "Bonding of O2, CO2, and CO on a Cs/p-GaAs(100) surface and its relation to negative electron affinity" @default.
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- W2005963744 doi "https://doi.org/10.1016/0039-6028(93)90984-r" @default.
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