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• W2005984480 abstract "Optically detected magnetic resonance (ODMR) studies of molecular beam epitaxial GaNP/GaP structures reveal presence of a P-related complex defect, evident from its resolved hyperfine interaction between an unpaired electronic spin $(S=1/2)$ and a nuclear spin $(I=frac{1}{2})$ of a $^{31}text{P}$ atom. The principal axis of the defect is concluded to be along a $⟨111⟩$ crystallographic direction from angular dependence of the ODMR spectrum, restricting the P atom (either a ${text{P}}_{text{Ga}}$ antisite or a ${text{P}}_{i}$ interstitial) and its partner in the complex defect to be oriented along this direction. The principal values of the electronic $g$ tensor and hyperfine interaction tensor are determined as: ${g}_{ensuremath{perp}}=2.013$, ${g}_{ensuremath{parallel}}=2.002$, and ${A}_{ensuremath{perp}}=130ifmmodetimeselsetexttimesfi{}{10}^{ensuremath{-}4}text{ }{text{cm}}^{ensuremath{-}1}$, ${A}_{ensuremath{parallel}}=330ifmmodetimeselsetexttimesfi{}{10}^{ensuremath{-}4}text{ }{text{cm}}^{ensuremath{-}1}$, respectively. The interface nature of the defect is clearly manifested by the absence of the ODMR lines originating from two out of four equivalent $⟨111⟩$ orientations. Defect formation is shown to be facilitated by nitrogen ion bombardment under nonequilibrium growth conditions and the defect is thermally stable upon post-growth thermal annealing." @default.
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• W2005984480 date "2010-03-31" @default.
• W2005984480 modified "2023-10-17" @default.
• W2005984480 title "Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction" @default.
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• W2005984480 doi "https://doi.org/10.1103/physrevb.81.115334" @default.
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