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• W2006008002 abstract "ZnO thin films were deposited on glass substrates by direct current (DC) sputtering technique at room temperature (RT) to 400 °C with a 99.999% pure ZnO target. Then the samples deposited at RT were annealed in air from the RT to 400 °C. The effects of substrate temperature (Ts) and annealing treatment (Ta) on the crystallization behavior and the morphology have been studied by X-ray diffraction and atomic force microscopy. We also compared the structural properties of samples deposited at 400 °C on glass to those deposited on Pt/silicon substrate. The resistivity, surface roughness and size of the grains have also been studied and correlated to the thickness of ZnO films deposited on Pt/Si substrates. The experimental results reveal that the substrate has a major influence on the structural and morphological properties. For the films deposited on glass, below 400 °C, Ts and Ta have a similar influence on the structure of the films. Moreover, the ZnO samples deposited at RT and annealed in air have poor electrical properties." @default.
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• W2006008002 date "2012-05-01" @default.
• W2006008002 modified "2023-10-18" @default.
• W2006008002 title "Structure, morphology and electrical characterizations of direct current sputtered ZnO thin films" @default.
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• W2006008002 doi "https://doi.org/10.1016/j.tsf.2011.08.036" @default.
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