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- W2006054576 abstract "4H-SiC Schottky barrier diodes (SBDs) were fabricated and characterized from room temperature to 573K using HfNxBy as Schottky electrodes. The results are compared to SBDs fabricated using other electrodes that include Ni, Pt, Ti and Au. The Schottky barrier height @Fb for as-deposited HfNxBy/n-/n+ diodes, determined from room temperature current-voltage characteristics, is 0.887eV. This is lower than those of SBDs fabricated using other metals such as Au, where @Fb is 1.79eV. The HfNxBy/n-/n+ diodes studied have a much higher on-resistance Ron of around 38.24m@W-cm^2, which is about four times that of Au/n-/n+ diodes, due to the higher sheet resistance of the sputtered HfNxBy electrode layer. The barrier height @Fb and ideality factor @h of the HfNxBy/n-/n+ diodes remain almost unchanged after 400 and 750^oC anneal in N2. This suggests excellent thermal and chemical stability of HfNxBy in contact with 4H-SiC." @default.
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- W2006054576 date "2006-01-01" @default.
- W2006054576 modified "2023-10-18" @default.
- W2006054576 title "Unterminated 4H-SiC Schottky barrier diodes with novel HfNxBy electrodes" @default.
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- W2006054576 doi "https://doi.org/10.1016/j.mee.2005.10.021" @default.
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