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• W2006164064 abstract "The surface chemistry and band bending of the ammonium sulfide-treated GaAs (100) surface has been studied using surface-sensitive synchrotron radiation photoemission spectroscopy. We find that the treatment leaves the GaAs surface terminated with roughly a monolayer of sulfur bonded to both As and Ga atoms. An n-type barrier height of 0.8 eV is measured. The thermal stability of the various chemical components is studied and various issues of the passivating mechanism are discussed." @default.
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• W2006164064 date "1989-08-28" @default.
• W2006164064 modified "2023-10-09" @default.
• W2006164064 title "Vacuum ultraviolet photoelectron spectroscopy of (NH₄)₂S‐treated GaAs (100) surfaces" @default.
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• W2006164064 doi "https://doi.org/10.1063/1.101780" @default.
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