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- W2006166757 abstract "A photothermal wave imager has been assembled and used to generate thermal-wave images of an active metal-oxide-semiconductor field-effect and related inactive microelectronic structure fabricated on a silicon chip. The imager, which monitors the thermoelastic surface deformation due to absorption of a highly focused, intensity-modulated heating laser beam, has proven to be capable of producing images of subsurface features related to processing steps (thermal-wave depth profiling) at open circuit, as well as current flow sensitive images related to electronic processes in the active transistor (plasma-wave depth profiling)." @default.
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- W2006166757 date "1988-01-01" @default.
- W2006166757 modified "2023-09-27" @default.
- W2006166757 title "Photothermal wave imaging of metal-oxide-semiconductor field-effect transistor structures" @default.
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- W2006166757 doi "https://doi.org/10.1063/1.340468" @default.
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