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- W2006190061 abstract "Using density functional theory and nonequilibrium Green's function formalism for quantum transport calculation, we have quantified the ballistic transport properties along different directions in two-dimensional boron-silicon (B-Si) compounds, as well as the current response to bias voltage. The conductance of the most B-Si devices is higher than the conductance of one-atom-thick boron and silicene. Furthermore, the negative differential resistance phenomenon can be found at certain B-Si stoichiometric composition, and it occurs at various bias voltages. Also, the peak-to-valley ratio is sensitive to the B-Si composition and dependent of the direction considered for B-Si monolayers. The present findings could be helpful for applications of the single-atomic layer B-Si sheets in the field of semiconductor devices or low-dimensional electronic devices." @default.
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- W2006190061 date "2015-03-21" @default.
- W2006190061 modified "2023-09-30" @default.
- W2006190061 title "Tuning negative differential resistance in single-atomic layer boron-silicon sheets" @default.
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- W2006190061 doi "https://doi.org/10.1063/1.4915350" @default.
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