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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2006199731> ?p ?o ?g. }

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• W2006199731 abstract "The degradation of the electrical properties of deep submicron metal-oxide-semiconductor field-effect transistors (MOSFETs) by 2 MeV electron irradiation at high temperatures was studied. The irradiation temperatures were 30, 100, 150 and 200 °C, and the fluence was fixed at 1015 e/cm2. For most experimental conditions, the threshold voltage (VT) is observed to reduce in absolute value both for n- and p-MOSFETs. This reduction is most pronounced at 100 °C, as at this irradiation temperature, the radiation-induced density of interface traps is highest. It is proposed that hydrogen neutralization of the dopants in the substrate plays a key role, whereby the hydrogen is released from the gate by the 2 MeV electrons." @default.
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• W2006199731 date "2004-04-13" @default.
• W2006199731 modified "2023-10-01" @default.
• W2006199731 title "Anomalous threshold voltage change by 2 MeV electron irradiation at 100 °C in deep submicron metal-oxide-semiconductor field-effect transistors" @default.
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• W2006199731 doi "https://doi.org/10.1063/1.1711170" @default.
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