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• W2006233140 abstract "SiN passivation on AlGaN∕GaN heterostructures was carried out using catalytic or plasma-enhanced chemical vapor deposition (Cat-CVD or PECVD), which has been found to increase two-dimensional electron gas (2DEG) density. The 2DEG density can be closely related to AlGaN surface properties via polarization effects. AlGaN potential barrier heights of AlGaN∕GaN heterostructures with and without SiN passivation were systematically investigated using x-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) measurements. The results for the XPS and C-V measurements were consistent and demonstrated that a reduction in the AlGaN potential barrier height was actually induced by SiN passivation. Furthermore, Cat-CVD SiN passivation lowered the AlGaN potential barrier height more significantly than PECVD SiN passivation did, suggesting that the passivation method can influence the AlGaN potential barrier height." @default.
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• W2006233140 date "2007-02-15" @default.
• W2006233140 modified "2023-09-25" @default.
• W2006233140 title "Reduction in potential barrier height of AlGaN∕GaN heterostructures by SiN passivation" @default.
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• W2006233140 doi "https://doi.org/10.1063/1.2472255" @default.
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