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• W2006236427 abstract "Considering the influences of silicon (Si) surface potential and postannealing in oxygen ambient, a steady-state current model of Al-SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> double structure was proposed. For Ta <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> layer with different technological history, the dominated conduction mechanism for the as-deposited layer is Poole-Frenkel emission and Schottky emission for the annealed layer. The oxygen annealing treatment enhances the Schottky barrier height (φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>SB</sub> ) of Al/Ta <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> interface, i.e., the higher annealing temperature, the lower φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>SB</sub> , and leakage current. When the annealing temperature is, however, , the trap density starts to increase slightly because of the crystallization effect, which results in the decrease of φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>SB</sub> . Using the stationary J-V model and the stretched exponential law of transient current, the charging process in Ta <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> layer can be described. Oxygen annealing lowers the density of trap charges (δ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0</sub> ) and increases the decay time constant (τ). Because of the crystallization effect in the Ta <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> layer annealed at temperature , τ decreases and δ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0</sub> increases." @default.
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• W2006236427 date "2013-09-01" @default.
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• W2006236427 title "Oxygen Annealing Effects on Transport and Charging Characteristics of ${rm Alhbox{-}Ta}_{2}{rm O}_{5}/{rm SiO}_{x}{rm N}_{y}hbox{-}{rm Si}$ Structure" @default.
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• W2006236427 doi "https://doi.org/10.1109/ted.2013.2274524" @default.
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