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• W2006288095 abstract "Single crystal 6H-SiC samples were irradiated at room temperature with 200 keV Al+ ions at fluences ranging from 3.5×1013 to 2.8×1014 ion/cm2. Depth profiles of crystal defects both in the C and Si sublattices were measured by Backscattering Spectrometry combined with channeling technique (BS/C) at 3550 keV 4He+ ion beam energy along the 〈0001〉 axial channeling direction. Damage in the carbon sublattice was found to be higher than in the silicon one. Moreover, the C/Si damage ratio decreased with increasing fluence. The crystal defect profiles can be well simulated both by full-cascade SRIM and Crystal–TRIM programs. Effective displacement energies for carbon and silicon sublattices in the applied fluence range of Al implantation were determined by comparing SRIM simulations to BS/C results." @default.
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• W2006288095 date "2002-03-01" @default.
• W2006288095 modified "2023-10-17" @default.
• W2006288095 title "Investigation of ion implantation-induced damage in the carbon and silicon sublattices of 6H-SiC" @default.
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• W2006288095 doi "https://doi.org/10.1016/s0925-9635(02)00007-9" @default.
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