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- W2006323802 abstract "Nonvolatile information storage devices based on an abrupt resistance switch when an electric bias is applied are very attractive for future memory applications. Recently, such a resistance switch was described in ferroelectric Zn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Cd <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> S, but the mechanism of switching remains controversial. Here, we present results that elucidate the mechanism, showing that a metal needs to be easily oxidized and is capable of diffusing into the ZnCdS film as a cation impurity forming a filamentary metallic conduction path" @default.
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- W2006323802 date "2007-01-01" @default.
- W2006323802 modified "2023-10-14" @default.
- W2006323802 title "Resistive Switching Mechanism in $hbox{Zn}_{x}hbox{Cd}_{1 - x}hbox{S}$ Nonvolatile Memory Devices" @default.
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- W2006323802 doi "https://doi.org/10.1109/led.2006.887640" @default.
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