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• W2006325912 abstract "Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100) substrate using 2-step deposition; atomic layer deposition (ALD) and RF magnetron sputtering, for Film Bulk Acoustic Resonator (FBAR) applications. The film deposition performed in this study was composed of following two procedures; the 1st deposition was using ALD method and 2nd deposition was using RF magnetron sputtering. The ZnO buffer layer ALD films were deposited using alternating diethylzinc (DEZn)/H2O exposures and ultrahigh purity argon gas for purging. Exposure time of 1 sec and purge time of 23 sec yielded an ALD cycle time. Two-step deposited ZnO films revealed stronger c-axis preferred-orientation than one-step deposited. Therefore, this method could be applied to the FBAR applications, since FBAR devices require high quality of thin films." @default.
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• W2006325912 date "2004-03-01" @default.
• W2006325912 modified "2023-10-14" @default.
• W2006325912 title "Characteristics of ZnO Thin Film by Atomic Layer Deposition for Film Bulk Acoustic Resonator" @default.
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• W2006325912 doi "https://doi.org/10.4028/www.scientific.net/msf.449-452.977" @default.
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