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• W2006337519 abstract "Oxidation of the surface of p-InP with alkaline peroxide and treatment with dilute potassium cyanide increase the efficiency of the p-InP/V2+−V3+ -HCl/C cell to 11.5%. The open circuit voltage of the cell follows the redox potential of the solution over a 0.5 V range. The lack of voltage pinning is consistent with photoemission studies of Spicer et al., showing that adsorption of oxygen on p-InP raises the surface fermi level from a position near the valence band maximum to noe near the conduction band minimum." @default.
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• W2006337519 date "1981-02-15" @default.
• W2006337519 modified "2023-09-24" @default.
• W2006337519 title "11.5% solar conversion efficiency in the photocathodically protected <i>p</i>-InP/V3+-V2+-HCI/C semiconductor liquid junction cell" @default.
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• W2006337519 doi "https://doi.org/10.1063/1.92307" @default.
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