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• W2006339017 abstract "Polycrystalline Si-added TbMnSixO3 (x=0.05, 0.1) and Si-doped Tb1−xMnSixO3, TbMn1−xSixO3 (x=0.05, 0.1) samples were fabricated by a conventional solid-state reaction. The dielectric properties of ceramics have been investigated in a temperature range of 77–350 K and a frequency range of 0.1−200 kHz. Especially, an extraordinarily high low-frequency dielectric constant (~105) at room temperature was observed in TbMnSi0.1O3, and the values of ε′(T) at other frequencies can reach around 104. It turns out that the addition of element Si changes dielectric properties of TbMnO3 remarkably. Through the measured data of complex impedance, bulk contribution and grain boundary effects to electrical response are identified by the analysis of complex plane diagrams (Nyquist diagram)." @default.
• W2006339017 created "2016-06-24" @default.
• W2006339017 creator A5015510726 @default.
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• W2006339017 date "2014-01-01" @default.
• W2006339017 modified "2023-09-30" @default.
• W2006339017 title "Dielectric characteristics of Si-added and Si-doped TbMnO3" @default.
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• W2006339017 doi "https://doi.org/10.1016/j.physb.2013.09.030" @default.
• W2006339017 hasPublicationYear "2014" @default.
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