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- W2006352016 abstract "The measurement of the bulk minority carrier lifetime of semiconductors requires efficient passivation of the recombination states at the surface. While numerous recipes have been published for Si-surface passivation, no adequate passivation methods are available for Ge. This paper presents a new and straightforward passivation method, based on a solution of iodine in polyvinyl acetate and acetone. The dependence of the carrier lifetime with time after passivation and with Ge resistivity has been investigated. It is found that the lifetime in this low resistivity material is strongly governed by Auger recombination." @default.
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- W2006352016 date "2003-03-01" @default.
- W2006352016 modified "2023-09-27" @default.
- W2006352016 title "Chemical surface passivation of low resistivity p-type Ge wafers for solar cell applications" @default.
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- W2006352016 doi "https://doi.org/10.1016/s0927-0248(02)00216-7" @default.
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