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- W2006353553 abstract "A local interconnection technology utilizing polysilicon strapped with selective-chemical-vapor-deposited (CVD) tungsten has been developed. Both n- and p-channel MOS transistors have been successfully fabricated using this technology. Tungsten deposited on polysilicon is an attractive gate shunt and local interconnection material because of its low resistivity, immunity to dopant segregation and diffusion, and resistance to electromigration. A potential problem of this technology is the excessive diode leakage current associated with strapping shallow source/drain diodes with tungsten. The leakage is attributed to defects induced by the heavy source/drain implant, which can be effectively eliminated with a proper annealing procedure.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W2006353553 date "1993-07-01" @default.
- W2006353553 modified "2023-09-25" @default.
- W2006353553 title "A selective CVD tungsten-strapped polysilicon local interconnection technology" @default.
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- W2006353553 doi "https://doi.org/10.1109/16.216425" @default.
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