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- W2006408609 abstract "Abstract Germanium carbon (Ge 1 − x C x ) thin films were deposited by co-sputtering of small C wafers pasted on a pure Ge target in a H 2 /Ar discharge. Spectroscopic ellipsometry, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to characterize the films deposited at different substrate temperatures. Results show that the optical band gap and the XPS intensity I Ge C and I C Ge of the Ge 1 − x C x films decrease, while the Ge and C contents in the films vary slightly (both within 1.5%) with increasing substrate temperature. XRD patterns indicate that elevated substrate temperatures can cause segregation of Ge and C and crystallization of Ge, while lower substrate temperatures facilitate the formation of Ge C bonds and germanium carbide grains in the films. Comparison of optical band gap of the co-sputtered Ge 1 − x C x films with that of the reactive-sputtered ones implies that co-sputtering can provide higher energy precursor C and Ge atoms than reactive-sputtering, which causes the larger optical band gap of the co-sputtered films." @default.
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- W2006408609 date "2014-01-01" @default.
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- W2006408609 title "Optical and structural properties of co-sputtered Ge1−xCx thin films as a function of the substrate temperature" @default.
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- W2006408609 doi "https://doi.org/10.1016/j.tsf.2013.11.110" @default.
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