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- W2006444944 abstract "Abstract Epitaxial layers of CuInSe 2 on {110}- and {100}-oriented GaAs substrates were deposited by flash evaporation and investigated using the RHEED technique. The temperature range of epitaxial was found to be 720–920 K. The epitaxial relationships expected from geometrical considerations are realized in the growth process, but the kinds of epitaxial relation having the smallest misfit are preferred. In layers grown on {100}-oriented substrates a superlattice structure occurs." @default.
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- W2006444944 date "1981-09-01" @default.
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- W2006444944 title "Structural investigations of CuInSe2 epitaxial layers on {110}- and {100}-oriented GaAs Substrates" @default.
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- W2006444944 doi "https://doi.org/10.1016/0022-0248(81)90509-1" @default.
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