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• W2006548404 abstract "A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and AlxGa1−xN (up to 12×) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations." @default.
• W2006548404 created "2016-06-24" @default.
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• W2006548404 date "2015-02-23" @default.
• W2006548404 modified "2023-10-03" @default.
• W2006548404 title "KOH based selective wet chemical etching of AlN, Al_xGa_1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode" @default.
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• W2006548404 doi "https://doi.org/10.1063/1.4913705" @default.
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