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- W2006562765 abstract "Abstract Ion-beam processes are still at the developmental stage, except for the use of wide-area beams for ion implantation which has led to a continued miniaturization of semiconductor devices, resulting in an increase in speed as well as in device complexity. However, ionized beams are also highly suitable for material modification by sputter-deposition, ion milling, lithography, ion microscopy and materials analysis. Evaluation of the optimum physical parameters in these ion-beam processes would significantly improve the utilization of ion beams. Experimentally important parameters in ion beam sputtering of Au and Al layers have been investigated by using the Monte Carlo based simulation code EVOLVE. To obtain the elementary sputtering yield values in the calculations close to the experimental ones, the values given in the literature for the surface binding and displacement threshold energies should have been lowered. As expected, calculations show that sputtering yields are also strongly affected by the energy loss mechanisms used as well as the binding energy values selected. Furthermore, three different models of sputtering, progressing from a simplistic one to a realistic one which incorporates atomic mixing, are compared for an example of a bilayer Au-Al target. Concentration profiles as a parameter of fluence are given and the sputter-etch surface analysis technique is discussed. Some comments related to the simulation field are given in the introduction and conclusion." @default.
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- W2006562765 date "1994-07-01" @default.
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- W2006562765 title "A study of parametric relationships in ion-beam processes" @default.
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- W2006562765 doi "https://doi.org/10.1080/10420159408219770" @default.
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