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• W2006608022 abstract "AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments." @default.
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• W2006608022 date "2013-08-01" @default.
• W2006608022 modified "2023-09-30" @default.
• W2006608022 title "Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications" @default.
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• W2006608022 doi "https://doi.org/10.1016/j.tsf.2012.10.134" @default.
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