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- W2006643204 abstract "To characterize the dielectric tunnel capacitance of the thin insulating layer in magnetic random access memory cell under the various ramping rates, the examination of current images and current-voltage (I–V) characteristics of the magnetic tunnel junctions were carried out by conductive atomic force microscopy. It is confirmed that in all three contrasted regions, dielectric tunnel capacitance in the very low leaky state decreases with higher ramping rate. With more induced polarization charges in the dielectrics under slower ramping rate, the dielectric tunnel capacitance will increase due to a higher reversed polarized field formed within the dielectrics." @default.
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- W2006643204 date "2005-05-06" @default.
- W2006643204 modified "2023-10-12" @default.
- W2006643204 title "Ramping effects on dielectric tunnel capacitance of magnetic random access memory cell" @default.
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- W2006643204 doi "https://doi.org/10.1063/1.1855552" @default.
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