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- W2006646670 abstract "In this paper, an extensive study on the intermodulation distortion and the linearity of gate-material-engineered cylindrical-gate MOSFET (GME CGT MOSFET) has been done, and the influence of technology variations such as channel length and gate material workfunction variations is explored using an ATLAS 3-D device simulator. The simulation results reveal that the GME CGT MOSFET design displays a significant enhancement in the device's linearity and intermodulation distortion performance in terms of the figure-of-merit metrics VIP2, VIP3, IIP3, and IMD3 and the higher order transconductance coefficients <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>gm</i> 1, <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>gm</i> 2, and <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>gm</i> 3. The results are, thus, useful for optimizing the device bias point for RFIC design with higher efficiency and better linearity performance." @default.
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- W2006646670 date "2012-12-01" @default.
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- W2006646670 title "An Investigation of Linearity Performance and Intermodulation Distortion of GME CGT MOSFET for RFIC Design" @default.
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- W2006646670 doi "https://doi.org/10.1109/ted.2012.2219537" @default.
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