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• W2006734243 abstract "We have been able to fabricate structures which consist of a thin (∼10 nm) polycrystalline W film embedded in surrounding single crystalline GaAs by molecular beam epitaxy (MBE) using an electron beam evaporation source to deposit W metal in an ultrahigh vacuum MBE growth chamber. The entire deposition sequence can take place at elevated temperature (625–700 °C) due to the nonreactive nature of W with respect to GaAs. Reflective high-energy diffraction and transmission electron microscopy indicate that the single crystal GaAs overgrowth proceeds by seeding from the GaAs layer beneath the W through spontaneously occurring perforations in the W layer." @default.
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• W2006734243 date "1985-12-01" @default.
• W2006734243 modified "2023-09-26" @default.
• W2006734243 title "Molecular beam epitaxial growth of tungsten layers embedded in single crystal gallium arsenide" @default.
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• W2006734243 doi "https://doi.org/10.1063/1.96322" @default.
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