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- W2006757650 abstract "GeTe/Sb2Te3 nanocomposite multilayer films were deposited by RF magnetron sputtering on SiO2/Si(100) substrates. The temperature dependence of the sheet resistance of multilayer films with various thickness ratios of GeTe to Sb2Te3 was investigated and compared with that of Ge2Sb2Te5. In situ resistance measurements were employed to follow the phase-change process. The crystallization temperature and activation energy for the crystallization of multilayer films increased with the thickness ratio of GeTe to Sb2Te3 within the materials. The multilayer films possessed the merits of high thermal stability and high crystallization speed. The failure time for GeTe/Sb2Te3 nanocomposite multilayer films was longer than that for Ge2Sb2Te5 at 110 °C. We conclude that GeTe/Sb2Te3 nanocomposite multilayer films are good candidates for phase-change random-access memory (PCRAM) applications." @default.
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- W2006757650 date "2009-11-20" @default.
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- W2006757650 title "Phase-Change Characteristics and Thermal Stability of GeTe/Sb2Te3Nanocomposite Multilayer Films" @default.
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- W2006757650 doi "https://doi.org/10.1143/jjap.48.115503" @default.
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