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• W2006769195 abstract "Molecular dynamics simulations with the Tersoff potential of the strain distribution around 60° misfit dislocation in a heteroepitaxial SiGe film confirm that highly compressed and expanded, cylindrical nanometer-sized regions appear on opposite sides of the (111) glide plane. Such a configuration is suggested to generate opposite chemical potential gradients for Si and Ge diffusion and, as verified by a Monte Carlo simulation, in the formation of Si-rich and Ge-rich nanowires along the dislocation core. This model is supported by photoluminescence measurements as a function of annealing temperature and time." @default.
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• W2006769195 date "2004-04-07" @default.
• W2006769195 modified "2023-09-26" @default.
• W2006769195 title "Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data" @default.
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• W2006769195 doi "https://doi.org/10.1063/1.1705727" @default.
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