Matches in SemOpenAlex for { <https://semopenalex.org/work/W2006769825> ?p ?o ?g. }
Showing items 1 to 85 of
85
with 100 items per page.
- W2006769825 endingPage "188" @default.
- W2006769825 startingPage "185" @default.
- W2006769825 abstract "Localized lifetime control by proton implantation can result in a considerable improvement in the trade-off between device turn-off time and forward voltage when compared with the unlocalized method of electron irradiation. After a proton dose of 3 × 1011cm−2 at 3.1 MeV implanted here into insulated gate transistors, turn-off time is reduced by more than an order of magnitude compared to unimplanted devices. When the implanted devices are operated as high voltage switches at a current of 152 A cm−2 and at a forward blocking voltage of 400 V, the following increases are observed by increasing device operating temperatures from 20 to 150°C, (a) forward voltage: 2.5 V to 2.7 V; (b) turn-off time: 0.78 μs to 1.23 μs; (c) leakage current: 20 nA to 1 mA. The physical mechanisms responsible for the qualitative temperature dependences are identified: MOS channel resistance for forward voltage, carrier capture cross-section for turn-off time, and generation and diffusion components of leakage current. Since no catastrophic or unrecoverable behavior is observed, normal device operation within the tested temperature range is possible. Isothermal annealing curves of turn-off time measured after annealing, and corresponding to a few hours annealing time, reveal that a constant turn-off time is reached after about an hour. The constant value increases with temperature, but is still below the unimplanted value after 4 h at 525°C. The turn-off time was verified to be constant even after 24 h of annealing at 200°C. Lifetime control by proton implantation seems to be more thermally stable than that caused by electon irradiation." @default.
- W2006769825 created "2016-06-24" @default.
- W2006769825 creator A5048371077 @default.
- W2006769825 creator A5063882637 @default.
- W2006769825 creator A5073907637 @default.
- W2006769825 creator A5084612761 @default.
- W2006769825 date "1987-02-01" @default.
- W2006769825 modified "2023-10-02" @default.
- W2006769825 title "Temperature behavior and annealing of insulated gate transistors subjected to localized lifetime control by proton implantation" @default.
- W2006769825 cites W2016069151 @default.
- W2006769825 cites W2023627011 @default.
- W2006769825 cites W2024702565 @default.
- W2006769825 cites W2048561172 @default.
- W2006769825 cites W2134243797 @default.
- W2006769825 cites W2135924034 @default.
- W2006769825 cites W2142971873 @default.
- W2006769825 cites W2154428632 @default.
- W2006769825 cites W2158001158 @default.
- W2006769825 cites W2159226068 @default.
- W2006769825 cites W2165459611 @default.
- W2006769825 cites W2334495188 @default.
- W2006769825 cites W4211165318 @default.
- W2006769825 doi "https://doi.org/10.1016/0038-1101(87)90147-x" @default.
- W2006769825 hasPublicationYear "1987" @default.
- W2006769825 type Work @default.
- W2006769825 sameAs 2006769825 @default.
- W2006769825 citedByCount "7" @default.
- W2006769825 crossrefType "journal-article" @default.
- W2006769825 hasAuthorship W2006769825A5048371077 @default.
- W2006769825 hasAuthorship W2006769825A5063882637 @default.
- W2006769825 hasAuthorship W2006769825A5073907637 @default.
- W2006769825 hasAuthorship W2006769825A5084612761 @default.
- W2006769825 hasConcept C113196181 @default.
- W2006769825 hasConcept C119599485 @default.
- W2006769825 hasConcept C121332964 @default.
- W2006769825 hasConcept C127413603 @default.
- W2006769825 hasConcept C159985019 @default.
- W2006769825 hasConcept C165801399 @default.
- W2006769825 hasConcept C172385210 @default.
- W2006769825 hasConcept C185592680 @default.
- W2006769825 hasConcept C192562407 @default.
- W2006769825 hasConcept C195370968 @default.
- W2006769825 hasConcept C2777855556 @default.
- W2006769825 hasConcept C39353612 @default.
- W2006769825 hasConcept C43617362 @default.
- W2006769825 hasConcept C49040817 @default.
- W2006769825 hasConcept C81370116 @default.
- W2006769825 hasConcept C97355855 @default.
- W2006769825 hasConceptScore W2006769825C113196181 @default.
- W2006769825 hasConceptScore W2006769825C119599485 @default.
- W2006769825 hasConceptScore W2006769825C121332964 @default.
- W2006769825 hasConceptScore W2006769825C127413603 @default.
- W2006769825 hasConceptScore W2006769825C159985019 @default.
- W2006769825 hasConceptScore W2006769825C165801399 @default.
- W2006769825 hasConceptScore W2006769825C172385210 @default.
- W2006769825 hasConceptScore W2006769825C185592680 @default.
- W2006769825 hasConceptScore W2006769825C192562407 @default.
- W2006769825 hasConceptScore W2006769825C195370968 @default.
- W2006769825 hasConceptScore W2006769825C2777855556 @default.
- W2006769825 hasConceptScore W2006769825C39353612 @default.
- W2006769825 hasConceptScore W2006769825C43617362 @default.
- W2006769825 hasConceptScore W2006769825C49040817 @default.
- W2006769825 hasConceptScore W2006769825C81370116 @default.
- W2006769825 hasConceptScore W2006769825C97355855 @default.
- W2006769825 hasIssue "2" @default.
- W2006769825 hasLocation W20067698251 @default.
- W2006769825 hasOpenAccess W2006769825 @default.
- W2006769825 hasPrimaryLocation W20067698251 @default.
- W2006769825 hasRelatedWork W1600843333 @default.
- W2006769825 hasRelatedWork W1999520298 @default.
- W2006769825 hasRelatedWork W2030642781 @default.
- W2006769825 hasRelatedWork W2056409791 @default.
- W2006769825 hasRelatedWork W2088081281 @default.
- W2006769825 hasRelatedWork W2093324122 @default.
- W2006769825 hasRelatedWork W2104138648 @default.
- W2006769825 hasRelatedWork W2744016125 @default.
- W2006769825 hasRelatedWork W4280626658 @default.
- W2006769825 hasRelatedWork W2528007297 @default.
- W2006769825 hasVolume "30" @default.
- W2006769825 isParatext "false" @default.
- W2006769825 isRetracted "false" @default.
- W2006769825 magId "2006769825" @default.
- W2006769825 workType "article" @default.