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• W2006873669 abstract "The effect of vacancies on the behavior of F in crystalline Si has been elucidated experimentally for the first time. With positron annihilation spectroscopy and secondary ion mass spectroscopy, we find that F retards recombination between vacancies ($V$) and interstitials ($I$) because $V$ and $I$ trap F to form complexes. F diffuses in the $V$-rich region via a vacancy mechanism with an activation energy of $2.12ifmmodepmelsetextpmfi{}0.08text{ }mathrm{e}mathrm{V}$. After a long annealing time at 700 ifmmode^circelsetextdegreefi{}C, F precipitates have been observed by cross-section transmission electron microscopy which are developed from the $V$-type defects around the implantation range and the $I$-type defects at the end of range." @default.
• W2006873669 created "2016-06-24" @default.
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• W2006873669 date "2003-04-17" @default.
• W2006873669 modified "2023-10-06" @default.
• W2006873669 title "Fluorine in Silicon: Diffusion, Trapping, and Precipitation" @default.
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• W2006873669 doi "https://doi.org/10.1103/physrevlett.90.155901" @default.
• W2006873669 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/12732052" @default.
• W2006873669 hasPublicationYear "2003" @default.
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