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- W2006896250 abstract "In order to obtain Ni–Mn–Ga epitaxial films crystallized in martensite structures showing Magnetic-Induced Rearrangement (MIR) of martensite variants, a fine control of the composition is required. Here we present how the co-sputtering process might be helpful in the development of Ni–Mn–Ga epitaxial films. A batch of epitaxial Ni–Mn–Ga films deposited by co-sputtering of a Ni-Mn-Ga ternary target and a pure manganese target has been studied. The co-sputtering process allows a precise control of the film compositions and enables keeping the epitaxial growth of Ni-Mn-Ga austenite during deposition at high temperature. It gives rise to tune the content of the MIR-active 14-modulated martensite in the film at room temperature, as well as micro and macro-twinned domains sizes." @default.
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- W2006896250 date "2010-01-01" @default.
- W2006896250 modified "2023-09-25" @default.
- W2006896250 title "Martensite structures and twinning in substrate-constrained epitaxial Ni–Mn–Ga films deposited by a magnetron co-sputtering process" @default.
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- W2006896250 doi "https://doi.org/10.1016/j.phpro.2010.11.094" @default.
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