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- W2006938316 abstract "In-plane orientation and annealing behavior of Rutile TiO 2 films grown on MgO (100) substrates by means of inductively coupled plasma-assisted sputtering were investigated. We deposited TiO 2 films on relatively low temperature (≦400°C) MgO substrates in Ar–O 2 mixture gases. Several films were annealed in atmospheric O 2 at 800°C for 60 min. X-ray φ scan measurements and AFM images revealed that rutile TiO 2 film grows on MgO (100) substrate with two orientations of TiO 2 (110)[001]∥MgO (100)[011] and TiO 2 (110)[001]∥MgO (100)[011]. Post annealing in atmospheric O 2 at 800°C improved the crystalline preference of TiO 2 film, however, formation of MgTiO 3 interface layer was clearly shown by cross sectional TEM image and XPS depth analysis. Values of refractive index and band gap energy were evaluated from optical characteristics of the films. High refractive index of 2.65 at wavelength of 500 nm in as-deposited TiO 2 film degraded to 2.0 in annealed film due to the formation of MgTiO 3 interface layer. Through this study, we offer stable rutile (110) surface and a formation route of MgTiO 3 dielectric layer." @default.
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- W2006938316 date "2005-05-01" @default.
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- W2006938316 title "In-Plane Orientation and Annealing Behavior of Rutile TiO<sub>2</sub> Films on MgO Substrate Prepared by Inductively Coupled Plasma-Assisted Sputtering" @default.
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- W2006938316 doi "https://doi.org/10.1143/jjap.44.3192" @default.
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