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• W2007064105 abstract "A modified Schottky-contact gated-four-probe structure was applied to study the stability of the hydrogenated and deuterated amorphous silicon (a-Si:D) thin-film transistors under various bias conditions. It was found that after 10 V bias stress, the density of gap states generated in both the upper and lower part of the mobility gap of deuterated amorphous silicon is two to twenty times less than those of hydrogenated silicon. Besides, less density of states at the lower part of mobility gap of a-Si:D is generated after 20, −10, and −20 V bias stress." @default.
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• W2007064105 date "2003-02-12" @default.
• W2007064105 modified "2023-09-26" @default.
• W2007064105 title "Stability improvement of deuterated amorphous silicon thin-film transistors characterized by modified Schottky-contact gated-four-probe method" @default.
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• W2007064105 doi "https://doi.org/10.1116/1.1545752" @default.
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