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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2007200317> ?p ?o ?g. }

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• W2007200317 abstract "Rapid thermal oxidation with dry oxygen has been carried out on porous silicon (PS) films formed by electrochemical etching. The purpose of the paper was to investigate the surface passivation capability of the oxidized PS layers and to understand the oxidation mechanism. Rutherford back scattering (RBS) and X-ray photoemission spectroscopy (XPS) analyses confirmed the formation of a stoichiometric quasi-silicon dioxide. Besides, elastic recoil diffusion analysis (ERDA) demonstrated that a high concentration of hydrogen is still present in the PS film even after oxidation. RTO resulted in a good surface passivation effect at high temperature (>1000°C) as seen by internal quantum efficiency analysis. However, lifetime in bulk silicon is affected by the RTO process." @default.
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• W2007200317 date "1998-12-01" @default.
• W2007200317 modified "2023-10-03" @default.
• W2007200317 title "Rapid thermal oxidation of porous silicon for surface passivation" @default.
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• W2007200317 doi "https://doi.org/10.1016/s1369-8001(98)00039-0" @default.
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