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- W2007202438 abstract "We describe the growth and characterization of GaAs films in which a high concentration (1 at. %) of elemental iron is introduced during growth in a conventional molecular beam epitaxy system. For films grown at 600 °C, the iron incorporates as Fe3GaAs precipitates. Unlike the formation of As precipitates in low temperature grown (LTG) GaAs, iron precipitate formation does not require a postgrowth anneal. Hall measurements of the as-grown GaAs/Fe3GaAs composite intentionally doped with silicon indicate that Fe3GaAs precipitates will deplete carriers in the same manner as As precipitates deplete carriers in annealed LTG GaAs. The degree of depletion depends on the initial growth temperature and the intentional doping level. Electrical behavior of samples subjected to a postgrowth rapid thermal anneal indicate that the material is deep level compensated by iron acceptor doping via dissolution of the Fe3GaAs precipitates." @default.
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- W2007202438 date "1996-09-23" @default.
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- W2007202438 title "The compensation and depletion behavior of iron doped GaAs grown by molecular beam epitaxy" @default.
- W2007202438 doi "https://doi.org/10.1063/1.117466" @default.
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