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- W2007220042 abstract "This paper presents a technique for fabricating high-aspect-ratio silicon dioxide pillars by electrochemical etching of n-type silicon in hydrofluoric acid (HF) solutions. Basic process flow and etching conditions are described, which make it possible to obtain high-aspect-ratio pillar arrays with good uniformity. Pillar arrays of different dimensions (i.e. diameter and separation) and of different arrangements can be produced in a single etch step on the same wafer. The large surface area makes these pillar arrays possible candidates for applications in biological sensing. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2007220042 date "2005-06-01" @default.
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- W2007220042 title "High-aspect-ratio silicon dioxide pillars" @default.
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- W2007220042 doi "https://doi.org/10.1002/pssa.200461205" @default.
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