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- W2007227403 abstract "A method to fabricate suspended silicon nanowires that are applicable to electronic and electromechanical nanowire devices is reported. The method allows for the wafer-level production of suspended silicon nanowires using anisotropic etching and thermal oxidation of single-crystal silicon. The deviation in width of the silicon nanowire bridges produced using the proposed method is evaluated. The NW field-effect transistor (FET) properties of the device obtained by transferring suspended nanowires are shown to be practical for useful functions." @default.
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- W2007227403 date "2008-05-01" @default.
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- W2007227403 title "Fabrication of Suspended Silicon Nanowire Arrays" @default.
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- W2007227403 doi "https://doi.org/10.1002/smll.200700517" @default.
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