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- W2007240063 abstract "GaN layer on c-plane misoriented sapphire, grown by metal organic chemical vapor deposition, has been studied. It was observed that the random and non-uniform distribution of the step was caused by the step reconstruction for GaN grown on 0° sapphire by atomic force microscopy. The image quality parameter analysis of electron back-scatter diffraction indicated that the strains were reduced for GaN grown on 0.2° and 0.3° sapphire, and optical and electrical properties were improved. The electroluminescence intensity of LED grown on 0.2° and 0.3° sapphire was 2 times as that of 0° sapphire." @default.
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- W2007240063 date "2009-04-01" @default.
- W2007240063 modified "2023-10-14" @default.
- W2007240063 title "Investigation of GaN layer grown on different low misoriented sapphire by MOCVD" @default.
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- W2007240063 doi "https://doi.org/10.1016/j.apsusc.2009.01.063" @default.
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