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• W2007243893 abstract "High quality nanocrystalline silicon (nc-Si) film was deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) without substrate RF bias at 350 °C. The nc-Si with a dense crystalline structure of the columnar type grew from the bottom to the top of the nc-Si film. A troublesome incubation layer did not exist at the bottom of the fabricated nc-Si film. A grain size of 40 nm was measured by using a SEM image. When a RF bias of 100 and 200 W was applied to the substrate to induce ion bombardment on the substrate, the crystalline structure and grains were not observed and a-Si deposition became dominant. The transition from nc-Si deposition into a-Si deposition can be attributed to ion bombardment which prevents nucleation and crystal growth at the surface of deposition. This shows that the reduction of ion bombardment can be a key factor to fabricate high quality nc-Si film. By using ICP-CVD with no substrate RF bias, ion bombardment can be reduced, while the density of plasma is kept high, so that high quality nc-Si can be fabricated due to the enhancement of crystalline growth on the surface." @default.
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• W2007243893 date "2008-05-01" @default.
• W2007243893 modified "2023-10-18" @default.
• W2007243893 title "High quality nanocrystalline silicon thin film fabricated by inductively coupled plasma chemical vapor deposition at 350°C" @default.
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• W2007243893 doi "https://doi.org/10.1016/j.jnoncrysol.2007.09.082" @default.
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