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• W2007251654 startingPage "1683" @default.
• W2007251654 abstract "A detailed theoretical and numerical analysis of single-finger and two-finger bipolar transistors is proposed, which includes both self-heating and impact-ionization effects. Although related to completely different physical phenomena, self-heating and impact ionization share a common feature in that they introduce a positive feedback mechanism that causes the same singularities in the current-voltage characteristics, namely, a snapback (or flyback) behavior and current bifurcation. These singularities are triggered if either one or both effects are activated. Based on a rigorous mathematical method, referred to as the Jacobian method, generalized conditions are derived for determining the onset of flyback and bifurcation, which ultimately limit the safe operating region, as a result of the combined action of impact ionization and self-heating. The proposed formulation also includes several important effects not considered in previous contributions. Finally, a detailed analysis of the limiting boundaries for safe device operation is presented, and simple criteria for the optimal choice of the ballasting network are suggested" @default.
• W2007251654 created "2016-06-24" @default.
• W2007251654 creator A5043183923 @default.
• W2007251654 creator A5048398147 @default.
• W2007251654 date "2006-07-01" @default.
• W2007251654 modified "2023-10-03" @default.
• W2007251654 title "Theory of electrothermal behavior of bipolar transistors: part III-impact ionization" @default.
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• W2007251654 doi "https://doi.org/10.1109/ted.2006.876285" @default.
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