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- W2007279715 abstract "Ga1–xInxAs-Epitaxieschichten (0,02 < × < 0,12) auf (111)-orientierten GaAs-Substraten wurden aus nichtstochiometrischen Schmelzen erhalten. – Die aus Strukturatzungen ermittelten Versetzungsdichten lagen zwischen 2 · 105 cm−2 und 3 · 107 cm−2, in Abhangigkeit von der Zusammensetzung, der Schichtdicke und der Abkuhlungsgeschwindigkeit. – Rontgentopographische Untersuchungen an {110}-Spaltflachen lieferten Informationen uber die Schichtperfektion und deuten am Heteroubergang Schicht/Substrat auf Verspannungen des Substratgitters hin. Die rontgenographische Gitterkonstantenbestimmung bestatigt die Gultigkeit der Vegardschen Regel im untersuchten Konzentrationsbereich. Die Halbwertsbreite von Doppelkristall-Reflexionskurven, die Atzgrubendichte und die relative Photolumineszenzintensitat zeigen analoge Abhangigkeiten von der Zusammensetzung der Schichten.Ga1–xInxAs epitaxial layers (0.02 ≦ × ≦ 0.12) are grown on (111)-oriented GaAs substrates from nonstoichiometric melts. The etch pit densities – determined by chemical etching – yield values between 2 · 105 cm−2 and 3 · 107 cm−2 and were found to be dependent on composition, layer thickness and cooling rate. X-ray topography of cleaved {110}-planes gives information on layer quality and indicates the existence of stress in the substrate lattice near the heterojunction. The validity of Vegard's law in the investigated concentration range was confirmed by X-ray determination of the lattice constants. The half width of double crystal spectrometer rocking-curves, the epd and the relative intensity of photoluminescence show similar dependence on the composition of the mixed crystal layers." @default.
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- W2007279715 date "1975-01-01" @default.
- W2007279715 modified "2023-09-27" @default.
- W2007279715 title "Zur Realstruktur von Ga1–xInxAs LPE-Schichten" @default.
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- W2007279715 doi "https://doi.org/10.1002/crat.19750100511" @default.
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