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- W2007342188 abstract "A new kind of charge-coupled device with buried channels is described. This device is fabricated by forming ion-implanted buried channels under the gaps between electrodes. Since the device does not depend on the surface potential under the gaps, a reliable and low-operating-voltage device with nonoverlapping gate electrodes can be made. Transfer efficiency greater than 99.5% per transfer has been obtained at 500 kHz." @default.
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- W2007342188 date "1973-03-15" @default.
- W2007342188 modified "2023-09-24" @default.
- W2007342188 title "Charge-coupled device with buried channels under electrode gaps" @default.
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- W2007342188 doi "https://doi.org/10.1063/1.1654641" @default.
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