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• W2007348033 abstract "Multiple energy aluminum (Al) implantations were performed at room temperature in n-type epitaxial 6H-SiC layers, aiming at amorphizing the material from the surface up to a depth inferior to 0.5 μm. Annealings were then carried out in an induction furnace. The goal of this paper is to optimize the furnace geometrical configuration, in order to reduce the surface degradation and improve the crystal reordering. This optimization was established for one-side amorphized wafers, which need restricting annealing parameters, and is therefore supposed to be valid for less crystal damaging implantations. Two types of geometrical parameters were essentially studied: the internal configuration, which tends to increase the silicon partial pressure inside the reactor, and the position of the sample, which has a direct influence on the recrystallization and on the dopant electrical activation. The annealings are compared for the same thermal parameters: the plateau temperature (1700 °C), the annealing duration (30 min), and the heating rate (60 °C s−1). The surface roughness was evaluated by using atomic force microscopy. Two final configurations were retained, leading to satisfactory results with respect to the as-implanted material: (i) Rutherford backscattering spectrometry in channeling geometry revealed a very good recrystallization in both cases, giving a signal level similar to the virgin crystal one; (ii) secondary ion mass spectrometry showed two distinct results depending on the sample position: one position led to some material etching, especially the SiC part which was amorphized by the implantation, and the second position gave rise to the deposition of a crudely monocrystalline SiC layer on the surface of the sample implanted side. This coating was found to prevent from any dopant loss by exodiffusion or material etching. Electrical measurements (four-point probe at 300 K) proved an Al substitutional ratio of 97 and 78% depending on the configuration, giving room temperature sheet resistances of about 2×104 and 4×104 Ω sq.−1, respectively, for 4×1019 cm−3 Al implanted samples." @default.
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• W2007348033 date "2002-03-01" @default.
• W2007348033 modified "2023-09-24" @default.
• W2007348033 title "Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments" @default.
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• W2007348033 doi "https://doi.org/10.1016/s0921-5107(02)00002-8" @default.
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