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- W2007355260 abstract "Positron lifetime measurements are used to study various doped and undoped III–V compound semiconductors like GaAs, GaP, InAs and InP. In some as-grown crystals native vacancies (V, V) or their complexes with dopants (TeAsV, VPZnInV) are detected with maximum concentrations of a few 1018 cm−3. In undoped GaAs neutral As vacancies V are identified, the concentration of which varies locally. The vacancies have their origin in deviations from the stoichiometrie composition of the compound. They disappear at 500°C. At this temperature defects created by irradiation with fast neutrons anneal also out. The relation between the bulk positron lifetime and the density and polarization of valence electrons is analyzed. Further, the potential of the positron annihilation method in identifying and characterizing vacancy-type defects in semiconductors is discussed. Das Positron als Sonde zur Untersuchung der Volumen- und Fehlstelleneigenschaften in Halbleitern Positronenlebensdauermessungen werden angewandt, um verschiedene dotierte und undotierte AIIIBV-Verbindungshalbleiter, wie GaAs, GaP, InAs und InP, zu untersuchen. In einigen Kristallen werden Leerstellen (V, V) oder ihre Komplexe mit Dotierungen (TeAsV, VPZnInV) mit maximalen Konzentrationen von einigen 1018 cm−3 nachgewiesen. In undotierten GaAs werden neutrale As-Leerstellen V identifiziert, deren Konzentration lokal variiert. Die Leerstellen haben ihren Ursprung in Abweichungen von der stöchiometrischen Zusammensetzung der Verbindung. Sie verschwinden bei 500°C. Bei dieser Temperatur heilen auch Defekte aus, welche durch Bestrahlung mit schnellen Neutronen erzeugt wurden. Die Beziehung zwischen der Positronenlebensdauer im Kristall und der Dichte und Polarisierung der Valenzelektronen wird analysiert. Weiterhin wird das Potential der Methode der Positronenannihilation zur Identifizierung und Charakterisierung leerstellenartiger Defekte in Halbleitern diskutiert." @default.
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- W2007355260 date "1986-01-01" @default.
- W2007355260 modified "2023-09-24" @default.
- W2007355260 title "The Positron as a Probe for Studying Bulk and Defect Properties in Semiconductors" @default.
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- W2007355260 doi "https://doi.org/10.1002/andp.19864980309" @default.
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