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- W2007364752 abstract "The first report based only on measurements using AES (Auger Electron Spectroscopy) profiles in GaAs FET with Al gate (ohmic contact Au-Ge/Ni/GaAs; Schottky contact Au/Cr/Al/GaAs) is presented. Six mm wide dual gate GaAs devices have been aged with and without DC bias conditions at different temperatures ranging from room temperature to 275°C. Other kinds of stresses have been made on these kind of devices like surge pulse test and endurance in humid ambiance. The different mechanisms which are involved in the degradation of the electrical characteristics are investigated and some correlation are established with the effects observed on the profiles of the elements constituting the ohmic contact and the gate contact. For each mechanism, the activation energy is given as well as the MTTF. By this way a prediction of what mechanism can cause the failure is obtained. Other use of the AES profiles can be made to find out all the parameters of the ohmic contact formation (layer thickness, annealing temperature). A new interpretation of the contact resistance increase is given by the support of AES profiles and fitting of experimental degradation with activation energy determination." @default.
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- W2007364752 title "Reliability of the structure Au/Cr/Au-Ge/Ni/GaAs in lownoise dual gate GaAs FET" @default.
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- W2007364752 doi "https://doi.org/10.1016/0026-2714(85)90191-x" @default.
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