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• W2007366188 abstract "Thermodynamically stable Ni silicide contacts were formed on n-type 6H-SiC using a remarkably modest thermal budget. Specifically, nickel monosilicide (NiSi) was formed at 300 °C via a solid-state reaction of a low-pressure chemical-vapor-deposited amorphous Si film with a sputter-deposited Ni overlayer. These contacts are ohmic with low specific contact resistance (ρc of 6.9×10−4 Ω cm2). Upon aging at 600 °C in air, ρc decreases rapidly, probably due to restructuring at the NiSi/SiC interface. After the initial decrease in ρc, the contact resistance remained in the 10−5 Ω cm2 range during aging at 600 °C for 300 h." @default.
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• W2007366188 date "2004-02-10" @default.
• W2007366188 modified "2023-10-14" @default.
• W2007366188 title "A low-temperature route to thermodynamically stable ohmic contacts to <i>n</i>-type 6H-SiC" @default.
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• W2007366188 doi "https://doi.org/10.1063/1.1646755" @default.
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