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- W2007367613 abstract "A comparison of different approaches for resist plasma removal (ashing) after dielectric-etch, over a porous spin-on methylsilsequioxane (MSQ) based dielectric material with a k value of 2.2 (here after designed as ULK, for ultra low dielectric constant) was conducted. A plasma system capable of low and high temperature operation and radical-dominated or ion-assisted reactions was used. Characterizations of various ashing plasma processes on the ULK material were carried out to compare oxidizing and reducing chemistries under different conditions. The main focus was to minimize any ULK modification and to achieve the best treatment efficiencies in rate and surface residue cleanliness. A high-temperature, hydrogen-based downstream plasma treatment was found to be both benign to the ULK and efficient." @default.
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- W2007367613 date "2004-06-01" @default.
- W2007367613 modified "2023-09-25" @default.
- W2007367613 title "Dry ashing process evaluation for porous ULK films" @default.
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- W2007367613 doi "https://doi.org/10.1016/j.mee.2004.02.066" @default.
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