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• W2007404741 abstract "Nanoscale patterned growth of GaAs on Si(111) by molecular beam epitaxy is examined. A 355 nm period two-dimensional array of circular holes (diameter ∼200–250nm) is fabricated into a 45-nm-thick SiO2 film on a Si(111) substrate by large-area interferometric lithography and dry etching. For 300 nm deposition, the GaAs epilayer selectively deposited within each hole on the patterned substrate is surrounded by {11¯0}-type sidewalls perpendicular to Si(111), resulting in a hexagon-based prismatic pillar, without significant lateral overgrowth. At the initial stage of growth, twins parallel to Si(111) and an aperiodic mixture of cubic and hexagonal phases are observed but most of the GaAs pillars are terminated with a cubic phase region. Raman scattering reveals that the individual nanoscale GaAs pillars are completely strain relaxed." @default.
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• W2007404741 date "2005-07-11" @default.
• W2007404741 modified "2023-09-30" @default.
• W2007404741 title "GaAs on Si(111)—crystal shape and strain relaxation in nanoscale patterned growth" @default.
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• W2007404741 doi "https://doi.org/10.1063/1.1984100" @default.
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