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- W2007406506 abstract "GaN epilayers grown with introducing a high-temperature SiN interlayer by metalorganic chemical vapour deposition (MOCVD) were investigated by means of XRD, AFM, and TEM. SiN4 was used as Si source for SiN growth. It was found that by inserting the SiN layer, the subsequently grown GaN layers have a lower threading dislocation density with respect to that in the conventional GaN films. The dislocations were observed to terminate at the SiN/GaN interface, where Si incorporations may occur. It suggests that the quality of the GaN epilayers has been improved by introducing the optimised grown HT-SiN interlayer." @default.
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- W2007406506 date "2003-11-24" @default.
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- W2007406506 title "Growth and evaluation of GaN with SiN interlayer by MOCVD" @default.
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- W2007406506 doi "https://doi.org/10.1002/pssc.200303442" @default.
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