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• W2007409075 abstract "Typical perovskite oxides SrTiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> (STO) and PbZr <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.52</sub> Ti <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.48</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> (PZT) were fabricated on GaN semiconductor substrates by pulsed laser deposition. STO and PZT films were deposited on bare GaN, TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , and MgO-buffered GaN. The effects of TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and MgO buffer-layers on the orientations and electric properties of the perovskite films were systematically studied. The crystalline properties were in situ monitored by reflective high energy electron diffraction and ex situ characterized by X-ray diffraction. It was found that the epitaxial temperature of STO and PZT was reduced by inserting a buffer layer. (111)-oriented films were obtained on bare and TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -buffered GaN. However, the orientations of the perovskite films were changed to be (110) when deposited on MgO buffer layer. Furthermore, PZT films deposited on MgO- and TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -buffered GaN show better electric performance compared with these films directly deposited on GaN. These results show that perovskite oxide could be epitaxially grown on GaN semiconductor substrates by inserting a proper buffer layer." @default.
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• W2007409075 date "2010-10-01" @default.
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• W2007409075 title "Study of the integrated growth of dielectric films on GaN semiconductor substrates" @default.
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• W2007409075 doi "https://doi.org/10.1109/tuffc.2010.1677" @default.
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